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[size=13.3333px]大家帮忙看看以下标记部分应该怎么翻译最准确：[size=13.3333px]专利1：
[size=13.3333px]The electrical performance of an integrated circuit is influenced by several different parameters. Included in this parameter set for a metal-oxide-semiconductor device are effective gate length, gate dielectric thickness, and channel doping. Integrated circuit designers typically expect an integrated circuit to [size=13.3333px]operate optimally[size=13.3333px] when it is [size=13.3333px]fabricated [size=13.3333px]in the center of the electrical and physical design rule specifications. [size=13.3333px]Frequently[size=13.3333px], however, experience has shown that integrated circuit designs tend to[size=13.3333px]work best[size=13.3333px] in other portions of the operating design space, sometimes even at the limits of the intended operating design space
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[size=13.3333px]1. [size=13.3333px]A method of performing a characterization of an integrated circuit design[size=13.3333px] that is customized during succeeding fabrication steps, the characterization accomplished with respect to different levels of a processing parameter that is fixed during preceding fabrication steps, the method comprising the steps of:[size=13.3333px]processing a wafer through the preceding fabrication steps, including processing the wafer at at least one of the preceding fabrication steps using processing that produces the different levels of the processing parameter within different integrated circuits on the wafer, to produce a standardized characterization wafer,
[size=13.3333px]processing the standardized characterization wafer through the succeeding fabrication steps using customized processing to produce a customized characterization wafer, and
[size=13.3333px]testing the integrated circuits on the customized characterization wafer to determine which of the different levels of the processing parameter produces integrated circuits having desired characteristics,
[size=13.3333px]wherein the different levels of the processing parameter are produced with a mask that is stepped across the wafer with different processing conditions.


[size=13.3333px][size=13.3333px]专利2：
[size=13.3333px]2. The system of claim 1 further comprising:
an I/O pin;
a mode switch for connecting said I/O pin to an input to said comparator for inputting said desired output voltage value in a programming mode and for connecting said I/O pin to said amplifier output in a user mode; and
a user/programming mode pin for controlling said mode switch.
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翻译大人们帮忙看看，标记部分怎么翻译最准确呢，多谢啦